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Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate

Ken TakahashiAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanShigeki YamadaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanRyuichi NakazonoAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanYasushi MinagawaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanTakayuki MatsudaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanTsunehiro UnnoAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanShoji KumaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, Japan
1998en
ABI

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