Boron and aluminum diffusion into 4H–SiC substrates
Andrzej KubiakTechnical University of Lodz, Department of Semiconductor and Optoelectronic Devices, Wolczanska 211/215, 90-924 Lodz, PolandJacek RogowskiTechnical University of Lodz, Zeromskiego 116, 90-924 Lodz, Poland
2010en
ABI
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