Power bipolar devices based on silicon carbide
P. A. IvanovIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaM. E. LevinshteĭnIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaT. T. MnatsakanovAll-Russia Electrotechnical Institute, Moscow, 111250, RussiaJohn W. PalmourCree Inc., Durham, NC, 27703, USAAnant AgarwalCree Inc., Durham, NC, 27703, USA
2005en
ABI
Annotatsiya
High-voltage 4H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors, and thyristors are discussed. The results of experimental and theoretical studies of the steady-state and transient characteristics of these devices are presented. Specific features of device operation, related to the specific electronic properties of silicon carbide and SiC-based p-n structures, are analyzed.
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