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Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

Ying GaoDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USAStanislav I. SolovievDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USAT. S. SudarshanDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USA

2001en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/s0038-1101(01)00254-4

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