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High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

Shey‐Shi LuDepartment of Electrical Engineering, National Taiwan University, Taipei, TaiwanChibing HuangDepartment of Electrical Engineering, National Taiwan University, Taipei, Taiwan

1992en

ABI

Annotatsiya

A Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor (HBT) grown on a

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Identifikatorlar

DOI: 10.1109/55.145025

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