Excess conductivity and the pseudogap state in Hf-doped YBa<sub>2</sub>Cu<sub>3</sub>O7−δ ceramics
S. V. SavichPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineA. V. SamoǐlovPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineР. В. ВовкPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineOleksandr V. DobrovolskiyPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineS. N. KamchatnayaPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineYa. V. DolgopolovaPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, UkraineO. A. Chernovol-TkachenkoPhysics Department, V. Karazin Kharkiv National University, 61077 Kharkiv, Ukraine
2015en
ABI
Annotatsiya
The electrical conductivity of hafnium (Hf)-doped YBa 2 Cu 3 O[Formula: see text] ceramics is investigated. Hf doping has been revealed to lead to an increase of the number of effective scattering centers for the normal charge carriers. In a broad temperature range, the excess conductivity of the investigated samples obeys an exponential temperature dependence, while near [Formula: see text] it is satisfactorily described by the Aslamazov–Larkin model. Meanwhile, Hf doping has been shown to lead to a notable broadening of the temperature range for the manifestation of the pseudogap anomaly in the [Formula: see text]-plane.
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