EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light
G. GulyamovNamangan Engineering Pedagogical Institute, Namangan, UzbekistanMukhammadjon G. DadamirzaevNamangan Engineering Pedagogical Institute, Namangan, UzbekistanNosir Yusupjanovich SharibayevNamangan Engineering Pedagogical Institute, Namangan, UzbekistanNe’matjon ZokirovNamangan Engineering Pedagogical Institute, Namangan, Uzbekistan
ABI
Annotatsiya
It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.
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