Photostimulated trap filling in Lu<sub>2</sub>SiO<sub>5</sub>:Ce<sup>3+</sup>
P. DorenbosInterfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The NetherlandsA.J.J. BosInterfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The NetherlandsC.W.E. van EijkInterfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
2002en
ABI
Annotatsiya
Upon exposing Lu2SiO5:Ce3+ scintillators to daylight, the material shows undesired intense afterglow lasting for several hours at room temperature. This effect is studied by means of illuminating Lu2SiO5:Ce3+ with visible and ultraviolet light. Conditions for trap filling and the relation with photoconductivity phenomena and Ce3+ luminescence quenching will be discussed. Autoionization of so-called Ce2 centres following the excitation to the lowest 5d level seems to play an important role in the mechanism.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
3 ta iqtibos0 ta foydalanilgan manba