Raman shifts in Si nanocrystals
Jian ZiFudan-T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of ChinaH. BüscherInstitut für Theoretische Physik II, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, GermanyClaus FalterInstitut für Theoretische Physik II, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, GermanyWolfgang LudwigInstitut für Theoretische Physik II, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, GermanyKaiming ZhangChinese Center of Advanced Science and Technology (World Laboratory), P. O. Box 8730, Beijing 100080Xide XieChinese Center of Advanced Science and Technology (World Laboratory), P. O. Box 8730, Beijing 100080
1996en
ABI
Annotatsiya
Raman shifts of Si nanocrystals versus size were studied theoretically by a bond polarizability model. Zero-dimensional spheres and one-dimensional columns were considered. The relation between the Raman shift and the size for Si spheres and columns was established, from which the size of Si nanocrystals can be obtained for a given Raman shift or vice versa.
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