Interaction of cobalt atoms with an oxidized Si(100)2 × 1 surface
M. V. GomoyunovaIoffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaI. I. ProninIoffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaD. E. MalyginIoffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaN. R. Gall’Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, RussiaD. V. VyalykhInstitut für Oberflächen-und Mikrostrukturphysik, Technische Universität Dresden, Dresden, D-01062, GermanyС. Л. МолодцовInstitut für Oberflächen-und Mikrostrukturphysik, Technische Universität Dresden, Dresden, D-01062, Germany
2005en
ABI
Annotatsiya
The initial stages of oxidation of a Si(100)2 × 1 surface and the interaction of cobalt atoms with it were studied by core-level photoelectron spectroscopy. The study was carried out with cobalt coverages of up to 8 ML. Computer modeling of the spectra of photoexcited electrons revealed Co atom penetration under the silicon oxide layer, an effect observed even at room temperature. This process was shown to give rise to the disappearance of silicon interface phases at the oxide-layer-silicon boundary and to the formation of a more complex phase involving atoms of Co, O, and Si. After completion of the process, a Co-Si solid solution forms at the interface.
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