Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces
Yukihiro HayashiDepartment of Electronics, Nagoya Municipal Industrial Research Institute, 3-4-41 Rokuban, Atsuta-ku, Nagoya 456-0058, JapanMotoki YoshinagaDepartment of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464 8603, JapanHiroya IkedaDepartment of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464 8603, JapanShigeaki ZaimaCenter for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, JapanYukio YasudaDepartment of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464 8603, Japan
1999en
ABI
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