Two-Photon Absorption in Zinc-Blende Semiconductors
C. R. PidgeonDepartment of Physics, Heriot-Watt University, Edinburgh, United KingdomB. S. WherrettDepartment of Physics, Heriot-Watt University, Edinburgh, United KingdomA.M. JohnstonDepartment of Physics, Heriot-Watt University, Edinburgh, United KingdomJed DempseyDepartment of Physics, Heriot-Watt University, Edinburgh, United KingdomAlan MillerDepartment of Physics, Heriot-Watt University, Edinburgh, United Kingdom
1979en
ABI
Annotatsiya
It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor ${({E}_{g}{^{3}n_{p}}^{2})}^{\ensuremath{-}1}$. Good agreement is obtained with reported coefficients at 300\ifmmode^\circ\else\textdegree\fi{}K for InSb, ${\mathrm{Hg}}_{1\ensuremath{-}x}{\mathrm{Cd}}_{x}\mathrm{Te}$, GaAs, and CdTe.
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