Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Space-charge-induced negative resistance in avalanche diodes

1. Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

   A. M. Sultanov, E. K. Yusupov, R. G. Rakhimov

   MaqolaPulsed Power Technology ApplicationsJournal of Nano- and Electronic Physics20242 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002680

2. Development of technology for creating high-voltage p0–n0 junctions based on GaAs

   A. M. Sultanov, Abdusattor Abdukarimov, M. Z. Kufian

   MaqolaSemiconductor Lasers and Optical DevicesBulletin of the Karaganda University Physics Series20231 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.003365