A method for measuring the lifetime of charge carriers in the base regions of high-speed diode structures

A method for measuring the lifetime of charge carriers in the base regions of p +-n-n + structures is suggested. This method makes it possible to perform measurements in the nanosecond range of lifetimes. The developed technique implies the same shape of measuring current pulse as is used for conventional measurements of the restoring times in diode structures. The method is validated on the basis of an analysis of a solution to the continuity equation for holes in a base region. The results of the calculations are compared with experimental data.

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