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Eutectic melting by pulsed ion beam irradiation

R. FastowDepartment of Materials Science, Cornell University, Ithaca, New York 14853J. W. MayerDepartment of Materials Science, Cornell University, Ithaca, New York 14853T. BratDepartment of Materials Engineering, Technion, Israel Institute of Technology, Haifa 32000, IsraelM. EizenbergDepartment of Materials Engineering, Technion, Israel Institute of Technology, Haifa 32000, IsraelJ. O. OlowolafeDepartment of Physics, University of Ife, Ile-Ife, Nigeria

1985en

ABI

Annotatsiya

Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.

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DOI: 10.1063/1.95756

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