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Ish: Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1. Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

   A. Salvador, W. Kim, Özgür Aktaş +3

   Maqola19962 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566385

2. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566386

3. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566387

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566388

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566389

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566390