Fullerenes as passivating agents of the surfaces of semiconductor photo- and light-emitting diodes

A new pathway for passivation of the surface of infrared photodiodes and light-emitting diodes operating at room temperature in the spectral range of 2–5 μm by individual fullerene C70 is proposed and its characteristics are studied. It is determined that during the passivation of photodiodes, dark current falls by 40% and resistance at zero bias increases by 24%; for light-emitting diodes, leaks fall by ∼20%, and resistance at zero bias increases by 45% and the intensity of emission of light-emitting diodes increases by ∼18% after the application of fullerene C70.

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