Computer Simulation of Range and Damage Distributions of He ions in SiC

The exrerimental projected ranges of various heavy ions in an amorphous Si target in the energy region where the nuclear stopping dominates are compared with calculations using the computer simulation program SASAMAL with the Lenz-Jensen, Moliere, Thomas-Fermi and Kalbitzer-Oetzmann (KO) screening parameters. In most cases, the best agreement was obtained with the KO screening parameters. The projected range distributions of He ions implanted in an SiC target were calculated using SASAMAL with KO screening parameters. The agreement between the SASAMAL(KO) results and our experimental data was satisfactory when the electronic stopping parameter k =1.3 k NS was used. The energy and the depth distributions of the primary knock-on atoms and the depth distributions of the recoil energy density with various values of the displacement energy E d were also calculated using SASAMAL(KO) for He ions in SiC.

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