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Application of δ-doping in GaAs tunnel junctions

F.W. RagayDepartment of Applied Physics, Eindhoven University of Technology, PO Box 513, Eindhoven, 5600 MB, The NetherlandsMaarten LeysDepartment of Applied Physics, Eindhoven University of Technology, PO Box 513, Eindhoven, 5600 MB, The NetherlandsJ.H. WolterDepartment of Applied Physics, Eindhoven University of Technology, PO Box 513, Eindhoven, 5600 MB, The Netherlands

1994en

ABI

Annotatsiya

The technique of δ-doping has been employed to fabricate MBE grown GaAs tunnel junctions for application as intercell contacts in tandem solar cells. By applying δ-doping, the effective Si concentration can be increased by almost a factor 10. In this way an effective n-type doping level of ~2 × 1019 cm-3 can be obtained. By growth at low temperature a p-type concentration of 2 × 1019 cm-3 can be achieved using Be. The as-grown δ-doped tunnel junction showed a tunnel current of 55 A cm-2. A tunnel diode with homogeneous Si doping of 4 × 1018 cm-3 shows a much lower tunnel current of 1.3 mA cm-2. To simulate the growth of the top cell, the tunnel junction was annealed at 650 °C for 2 h. After annealing the peak current of the δ-doped tunnel junction dropped to 183 mA cm-2. This is still sufficient for forming intercell contacts in GaAs-AlGaAs tandem cells.

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Identifikatorlar

DOI: 10.1049/el:19940002

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