Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: 3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics

1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

   K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000055

2. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

   K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000128