Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Performance limiting surface defects in SiC epitaxial p-n junction diodes

1. Current Analysis of Ion Implanted p<sup>+</sup>/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

   Roberta Nipoti, Fabio Bergamini, F. Moscatelli +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000136

2. About the Nature of Recombination Current in 4H-SiC pn Structures

   Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000217