Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters
Sh. U. YuldashevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaYoon ShonQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaYongchai KwonQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaDejun FuQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaD. Y. KimQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaH. J. KimQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaTae Won KangQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaXuesong FanDepartment of Physics, Wuhan University, Wuhan 430072, People’s Republic of China
2001en
ABI
Annotatsiya
The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and attributed to the enhanced geometric magnetoresistance effect in inhomogeneous semiconductors with metallic inclusions. The additional enhancement of positive magnetoresistance under light illumination is due to the higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation.
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