Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
Aidong ShenLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanF. MatsukuraLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanShiping GuoLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanYasuhiro SugawaraLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanHideo OhnoLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JapanMasahiko TaniKansai Advanced Research Center, Communications Research Laboratory, M.P.T., Iwaoka 558-2, Kobe 651-2401, JapanHiroshi AbeKansai Advanced Research Center, Communications Research Laboratory, M.P.T., Iwaoka 558-2, Kobe 651-2401, JapanH.C. LiuInstitute for Microstructural Sciences, National Research Council, Ottawa, Ont., Canada K1A 0R6
1999en
ABI
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