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The synergetic phenomena in photoexcited semiconductors

P. M. Karageorgy‐AlkalaevInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentA. Yu. LeĭdermanInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, Tashkent
physica status solidi (a)journal1987en
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The recombination-stimulated aftereffects are considered of metastable lattice defect creation as well as of defect-impurity complex structural transformations, which may result in the selfinhibition of their recombination activity. It is obtained that within similar semiconductors cooperative processes develop, resulting in the self-organization of an inhomogeneous spatialtemporal distribution of free carriers and defect-impurity complex concentration. As a consequence within the homogeneous bulk of an uniformly photoexcited semiconductor spontaneous dynamic potential barrier formation arises. It is established that photogenerated electron-hole pairs being separated with similar dynamic barriers results in the appearance of a Synergetic photovoltaic effect, i.e. direct or alternating photovoltage and photocurrent formation within the bulk of an uniformly photoexcited homogeneous semiconductor specimen. [Russian Text Ignored].

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