Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   MaqolaSemiconductor materials and interfacesSemiconductors20204 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.402217

2. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   MaqolaNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.452998

3. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.007102

4. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.010337