Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

1. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000141

2. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/openalex/2004.article.000109