Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress
Ivan A. StarkovInstitute for Microelectronics, Vienna University of Technology, Gußhausstraße 27-29, A-1040 Vienna, AustriaA. S. StarkovInstitute of Refrigeration and Biotechnology, National Research University of Information Technologies, Mechanics and Optics, Kronverksky pr. 49, 197101 St. Petersburg, Russia
2013en
ABI
Annotatsiya
Annotatsiya mavjud emas.
Identifikatorlar
Iqtiboslar va manbalar
3 ta iqtibos0 ta foydalanilgan manba