Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field
M. G. DadamirzayevNamangan Engineering Pedagogical Institute, Namangan, 716003, Uzbekistan
ABI
Annotatsiya
The emf U oc of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
2 ta iqtibos0 ta foydalanilgan manba