Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Ya. A. ParkhomenkoIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaP. A. DementevIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaK. D. MoiseevIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2016en
ABI
Annotatsiya
The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface density is 3 × 10 9 cm –2 .
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