Temperature Dependence of Photoluminescence Spectra of Nondoped and Electron-Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>: Crossover from Auger Recombination to Single-Carrier Trapping

We report unusual photoluminescence (PL) behaviors in highly photoexcited ${\mathrm{SrTiO}}_{3}$ crystals at low temperatures. The PL spectrum and dynamics show abrupt changes below 150 K in both nondoped and electron-doped ${\mathrm{SrTiO}}_{3}$ samples. We clarified that the PL dynamics in both nondoped and electron-doped ${\mathrm{SrTiO}}_{3}$ is well described by the same simple model involving single-carrier trapping, radiative bimolecular recombination, and nonradiative Auger recombination. The unusual temperature dependence of PL dynamics is caused by the crossover from Auger recombination at high temperatures to single-carrier trapping at low temperatures. We discuss the temperature-dependent PL dynamics in conjunction with the high carrier mobility of ${\mathrm{SrTiO}}_{3}$ at low temperatures.

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