Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

   A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

   MaqolaZnO doping and propertiesSemiconductors20213 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.001396

2. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

   P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

   MaqolaZnO doping and propertiesJournal of Magnetism and Magnetic Materials20081 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000229

3. Effect of Be codoping on the photoluminescence spectra of GaMnAs

   Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3

   MaqolaZnO doping and propertiesCurrent Applied Physics20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000290

4. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

   P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

   MaqolaZnO doping and propertiesRussian Physics Journal20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.004831