Growth and properties of La2−<i>x</i>Sr<i>x</i>CuO4 films
I. E. TrofimovDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855Lois A. JohnsonCenter for Ceramics Research, Rutgers University, Piscataway, New Jersey 08855Kandalam V. RamanujacharyDepartment of Chemistry, Rutgers University, Piscataway, New Jersey 08855Saikat GuhaDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855Mark HarrisonDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855M. GreenblattDepartment of Chemistry, Rutgers University, Piscataway, New Jersey 08855Marta Z. CieplakDepartment of Physics and Astronomy, Piscataway, New Jersey 08855P. LindenfeldDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855
1994en
ABI
Annotatsiya
Single-crystalline films of La2−xSrxCuO4 have been grown epitaxially on SrTiO3, NdGaO3, and LaSrAlO4 substrates by laser ablation. We show that record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit values of Tco above 38 K, as well as a linear variation of the resistivity with T and excellent crystal quality.
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