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Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures

S M OtazhonovFergana State University, Fergana, UzbekistanRavshan ErgashevFergana State University, Fergana, UzbekistanK A BotirovFergana State University, Fergana, UzbekistanB A QaxxorovaFergana State University, Fergana, UzbekistanM A XudoynazarovaFergana State University, Fergana, UzbekistanN A AbdukarimovaFergana State University, Fergana, UzbekistanM E MadaminovaFergana State University, Fergana, UzbekistanE M IsmoilovaFergana State University, Fergana, Uzbekistan

Journal of Physics Conference Seriesjournal2022en

ABI

Annotatsiya

Abstract In this paper, we study the photoelectric properties of pCdTe-nCdS and pCdTe-nCdSe-based film heterostructures. It is shown that the high value of the electron diffusion length in pCdTe slick (pellicle) is due to the presence of a built-in field in it. When studying the effect of temperature on the spectral characteristics, it was found that with increasing temperature, the maximum photosensitivity of the heterostructure shifts towards longer wavelengths of light. The shift in the photosensitivity maximum is explained by changes in the band gap of cadmium telluride. As shown, the accumulation coefficient increases with raising thickness of the wide-gap layer. It has been established that the short-wavelength edge of the photosensitivity of the pCdTe-nCdS structure begins to increase sharply at a photon energy of hv ≤ 2,3 eV, while the photosensitivity of the pCdTe-nCdSe structure already at a photon energy has a significant value ~ 100 μA/mV.

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Mavzular

Chalcogenide Semiconductor Thin Films Advanced Semiconductor Detectors and Materials Quantum Dots Synthesis And Properties

Identifikatorlar

DOI: 10.1088/1742-6596/2388/1/012001

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