High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD
V. M. LantratovIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaN. A. KalyuzhnyĭIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaS. А. MintairovIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaN. Kh. TimoshinaIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaM. Z. ShvartsIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaV. M. AndreevIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2007en
ABI
Annotatsiya
Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary Ga x In1−x P and Al x In1−x P alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current density of 207 A/cm2 on the basis of heavily doped n ++-GaAs:Si and p ++-AlGaAs:C layers is developed. Cascade GaInP/GaAs solar cells obtained as a result of relevant studies featuring a good efficiency of the solar-energy conversion both for space and terrestrial applications. The maximum value of the GaInP/GaAs solar-cell efficiency was 30.03% (at AM1.5D, 40 suns).
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