Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
Sana BoughdachiDepartment of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, TurkeyYosef BadalıDepartment of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, TurkeyYashar Azizian‐KalandaraghDepartment of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, TurkeyŞ. AltındalDepartment of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey
2018en
ABI
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