KINETICS OF FORMATION OF COMPLEX DEFECTS IN SILICON DOPED WITH ZINC AND NICKEL
Daryabay Muratbaevich EsbergenovScientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan named after Mirzo UlugbekSaidovich Nasriddinov SayfilloScientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan named after Mirzo Ulugbek
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