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InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Fei XueThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USAHan ZhaoThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USAYen‐Ting ChenThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USAYanzhen WangThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USAFei ZhouThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USAJack C. LeeThe University of Texas at Austin Department of Electrical and Computer Engineering, , Texas 78758, USA

2011en

ABI

Annotatsiya

Performance improvement of InGaAs buried channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been achieved by inserting InAs layer and properly designing the inserted layer position. In0.7Ga0.3As and InAs channel buried channel MOSFETs were fabricated and analyzed including drive current, transconductance, effective mobility, and subthreshold swing. All InAs buried channel devices show good off-state and saturation property. By inserting InAs in the middle of InGaAs channel (InGaAs/InAs/InGaAs channel), 37% enhancement of high field effective channel mobility was achieved over devices with pure InGaAs channel. Devices with InAs inserted in the middle exhibits peak effective channel mobility around 6140 cm2/V s and subthreshold swing of 107 mV/dec.

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Identifikatorlar

DOI: 10.1063/1.3559609

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