Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
Maqola

<i>Colloquium</i>: Excitons in atomically thin transition metal dichalcogenides

Gang WangUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceAlexey ChernikovUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceM. M. GlazovUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceTony F. HeinzUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceX. MarieUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceT. AmandUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceBernhard UrbaszekUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France
2018en
ABI

Annotatsiya

Most two-dimensional (2D) semiconductors are interesting materials as quantum confinement enhances the Coulomb interaction between carriers, leading to a strong attraction between conduction electrons and valence holes, forming stable excitons and the optical response of 2D semiconductors can be extraordinary. In this Colloquium the progress and open questions in the study of excitons in 2D semiconductors from both the experimental and theoretical perspectives are reviewed.

Hali tarjima qilinmagan

Identifikatorlar

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba