Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
Morito AkiyamaMeasurement Solution Research Center National Institute of Advanced Industrial Science and Technology Tosu, Saga 841-0052 (Japan)Toshihiro KamoharaMeasurement Solution Research Center National Institute of Advanced Industrial Science and Technology Tosu, Saga 841-0052 (Japan)Kazuhiko KanoResearch Laboratories, DENSO CORPORATION Komenoki, Nisshin, Aichi 470-0111 (Japan)Akihiko TeshigaharaResearch Laboratories, DENSO CORPORATION Komenoki, Nisshin, Aichi 470-0111 (Japan)Yukihiro TakeuchiResearch Laboratories, DENSO CORPORATION Komenoki, Nisshin, Aichi 470-0111 (Japan)Nobuaki KawaharaResearch Laboratories, DENSO CORPORATION Komenoki, Nisshin, Aichi 470-0111 (Japan)
2008en
ABI
Annotatsiya
A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1 − xN) alloy thin films, and the use of dual cosputtering, which leads to nonequilibrium alloy thin films.
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