Effects of bias voltage on the structure and ultrasonic response of LiNbO3 film transducers deposited by magnetron sputtering
Xiaomei ZengHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan, 430072, ChinaXiangyu ZhangSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, ChinaChang XuHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan, 430072, ChinaZhong ZengSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, ChinaYangyang YuSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, ChinaА. Б. ТолстогузовCentre for Physics and Technological Research (CeFITec), Universidade Nova de Lisboa, Caparica, 2829-516, PortugalXiangdong MaSpecial Equipment Safety Supervision Inspection Institute of Jiangsu Province, 210036, Nanjin, ChinaHuayong HuSpecial Equipment Safety Supervision Inspection Institute of Jiangsu Province, 210036, Nanjin, ChinaJun ZhangSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, ChinaBing YangSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, ChinaSheng LiuHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan, 430072, ChinaVasiliy PelenovichHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan, 430072, China
2024en
ABI
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