Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study
Asen AsenovDevice Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UKR. BalasubramaniamDevice Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UKA. R. BrownDevice Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UKJ. H. DaviesDevice Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UKS. SainiDevice Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK
2002en
ABI
Annotatsiya
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
2 ta iqtibos0 ta foydalanilgan manba