Statistical mechanism of the formation of the energy spectra of sputtered molecular clusters
Н. Х. ДжемилевInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100125, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100125, UzbekistanSh. T. KhojievInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100125, Uzbekistan
ABI
Annotatsiya
The energy spectra of Si n O − clusters sputtered from Si targets by Xe+ ions with O2 pumping onto a bombarded surface, as well as by O 2 + ions, are studied. It is shown that the form of the Si n O 2+1 − energy distributions does not depend on the experimental conditions. Significant differences in the energy spectra of O and Si monomers as compared to Si n O 2+1 − clusters are revealed. The mentioned features of the energy distribution of Si n O − clusters are explained within the framework of the statistical recombination mechanism of their formation in combinatorial synthesis processes.
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