INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI
N. A. TurgunovDoctor Of Physical And Mathematical Sciences Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, UzbekistanE.Kh. BerkinovResearch Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, UzbekistanR.M. TurmanovaResearch Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan
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Annotatsiya
The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples. It is revealed that a decrease in the mobility of charge carriers in the temperature range of 120÷320 K is of particular importance in increasing the resistivity of samples.
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