Morphological Studies on Spray Deposited Lanthanum Sulphide (La<sub>2</sub>S<sub>3</sub>) Thin Films

The spray pyrolysis was employed to prepare Lanthanum Sulphide (La 2 S 3 ) thin films on silicon non conducting glass substrate using lanthanum chloride and thioacetamide from aqueous medium. The effect of preparative parameters on film properties was studied. Further thin films characterization was carried out by electrical resistivity, thermoemf, optical, XRD and SEM measurement techniques. The electrical resistivity was the order of 10 4 – 10 5 Ω cm and it shows semiconducting behavior. The Thermoemf studies reveal that Lanthanum Sulphide material is P-type. The direct band gap of Lanthanum Sulphide (La 2 S 3 ) thin films was estimated to be 2.5 eV. The XRD studies indicate that Lanthanum Sulphide (La 2 S 3 ) thin films are polycrystalline. A morphological study shows that the Lanthanum Sulphide (La 2 S 3 ) thin films have fibrous network.

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