Correlations of the 4.77–4.28-eV luminescence band in silicon dioxide with the oxygen vacancy

A luminescence band observed at 4.77 eV (260 nm) in crystalline and at 4.28 eV (290 nm) in amorphous silicon dioxide has been found to correlate with optical and spin resonance measurements of oxygen vacancy concentrations in a series of irradiated samples. The 4.28-eV (290-nm) band has also been observed in the silicon dioxide layer of metal-oxide-semiconductor (MOS) devices. The intensity of the bands can be increased by chemical reduction in carbon monoxide vapor or decreased by heating in oxygen or water vapor. The 4.28-eV (290-nm) luminescence intensity in the MOS samples also seems to be related to the trapped positive charge in the silicon dioxide. These facts all support a model for the luminescence center as being the oxygen vacancy.

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