Nonlinear effects in picosecond high-power diode lasers
E. L. PortnolA. F. Ioffe Physico‐Technical Institute, Academy of Sciences of the USSR, 26 Polytekhnicheskaya st. 194021 Leningrad, USSRE.A. AvrutinA. F. Ioffe Physico‐Technical Institute, Academy of Sciences of the USSR, 26 Polytekhnicheskaya st. 194021 Leningrad, USSRA. ChelnokovA. F. Ioffe Physico‐Technical Institute, Academy of Sciences of the USSR, 26 Polytekhnicheskaya st. 194021 Leningrad, USSR
1991en
ABI
Annotatsiya
Dynamic properties of semiconductor laser diodes with fast intracavity saturable absorber are studied theoretically and experimentally. It is shown that passive Q‐switching in such lasers produces picosecond optical pulses of very high intensity. Thus, gain nonlinearities greatly affect the properties of the lasers, leading to considerable reduction of self‐pulsing current range, maximum optical pulse intensity, and repetition frequency obtainable. This effect is most pronounced for the shortest absorber relaxation times. Transient laser emission pictures observed experimentally are in reasonable agreement with the simulated results.
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