Si-Ge solid solution single crystal growth by electron beam floating zone technique
М. С. СаидовPhysico-Technical Institute, Uzbek Academy of Sciences, Tashkent, USSRA. YusupovPhysico-Technical Institute, Uzbek Academy of Sciences, Tashkent, USSRR. S. UmerovPhysico-Technical Institute, Uzbek Academy of Sciences, Tashkent, USSR
1981en
ABI
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