Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
Isamu AkasakiDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanHiroshi AmanoDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanShigetoshi SotaDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanHiromitsu SakaiDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanToshiyuki TanakaPioneer Electronic Corporation, 1-1 Fujimi 6-chome, Tsurugashima-shi, Saitama 350-02, JapanMasayoshi KoikeToyoda Gosei Co., Ltd., 1 Nagahata, Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
1995en
ABI
Annotatsiya
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
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