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Magnetic energy levels of bismuth in the low-quantum-number limit

M.P. VecchiDepartment of Electrical Engineering and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139M. S. DresselhausDepartment of Electrical Engineering and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
1974en
ABI

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A quantitative description of the electronic magnetic levels of bismuth in the low-quantum-number limit is presented. The model is based on the simplifications to the Baraff Hamiltonian made by Maltz and Dresselhaus and includes the effects of bands outside the two-band model as well as the interaction between the $j=0$ levels in the conduction and valence bands represented by a coupling parameter $P$. Magnetoreflection results on interband Landau-level and cyclotron-resonance transitions in the low-quantum-number limit are utilized in the determination of the parameters of this model, including the first quantitatitive measurement of $P$. Values for the direct energy gap, cyclotron effective masses, and coupling parameter $P$ are reported for $\stackrel{\ensuremath{\rightarrow}}{H}\ensuremath{\parallel}\mathrm{binary}$ and $\stackrel{\ensuremath{\rightarrow}}{H}\ensuremath{\parallel}\mathrm{bisectrix}$ axes in the temperature range $4.2<T<75$ K.

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