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The Anti-Localization Effect in Bi Thin Films

Fumio KomoriDepartment of Physics, Faculty of Science, University of TokyoShun-ichi KobayachiDepartment of Physics, Faculty of Science, University of TokyoWataru SasakiDepartment of Physics, Faculty of Science, University of Tokyo
1983en
ABI

Annotatsiya

Temperature and magnetic field dependence of conductivity in Bi thin films is measured and compared with theories of the localization and the Coulomb interaction between electrons. The anti-localization effect in the case of strong spin-orbit interaction–logarithmic increase of conductivity with decreasing temperature–is found together with the other ln T term due to the interaction effect. From the analysis of the magnetic field dependence the inelastic scattering time is determined to vary as T -1 below 1.5 K and as T -2 above 4 K being consistent with the temperature dependence of conductivity.

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